| PART |
Description |
Maker |
| HYS64V32300GU HYS72V32300GU |
3.3 V 32M × 64-Bit SDRAM Module(3.3 V 32M × 64同步动态RAM模块)
3.3 V 32M × 72-Bit SDRAM Module(3.3 V 32M × 72同步动态RAM模块)
|
SIEMENS AG
|
| IC-NG |
8-BIT Sin/D CONVERTER-PROCESSOR
|
IC-Haus GmbH
|
| IC-NQ IC-NQEVALNQ1D IC-NQTSSOP20 IC-NQTSSOP20ET-40 |
13-bit Sin/D CONVERTER WITH CALIBRATION
|
IC-Haus GmbH
|
| IC-NVH IC-NVHTSSOP20 |
6-BIT Sin/D FLASH CONVERTER
|
IC-Haus GmbH
|
| IC-NQL IC-NQLTSSOP20 |
13-bit Sin/D CONVERTER WITH SSI INTERFACE
|
IC-Haus GmbH
|
| KM23C32120C |
32M-Bit (4Mx8) CMOS Mask ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29DL321BD-80 MBM29DL322BD-80 MBM29DL323BD-80 MB |
OFFICE 802.3 TRANS CBL 1M 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
TVS BIDIRECT 600W 33V SMB 32M的（4米8/2M × 16）位双操
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PBGA57
32M (4M X 8/2M X 16) BIT Dual Operation 4M X 8 FLASH 3V PROM, 80 ns, PDSO48
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
